Fabrication of SiCN thin film on a substrate and measurement of sheet resistivity Literature Review

ilicon Carbonitride (SiCN) is a novel polymer derived ceramic material, which is not only mechanically, chemically and thermally robust, but also possesses functional properties. These properties yields SiCN as an excellent choice for sensor applications in high temperatures with harsh chemical conditions. The principal objective of the research is to develop the underlying materials science for novel thin film onsubstrate sensors from polymer derived SiCN ceramics. The science would seek to establish nanostructure property relationships which are necessary for reliable implementation into sensing devices. [1] As a part of the efforts to develop a SiCN thin film gas sensor, this project aims to establish the electrical properties of SiCN thin film. This means that the relationships will be established between (a) the resistance of the SiCN film and different surrounding gas types, and (b) between the resistance and the surrounding temperature (around 1000°C). In order to achieve those objectives, the fabrication of the SiCN must be known and the experimental methods for measuring the sheet resistivity of the thin film sample with accuracy must be established. This review summarizes relevant studies about the SiCN thin film material properties and its fabrication techniques and then moves on to review the four-point probe measurement system, which is a well-established system for measuring the sheet resistance of semiconductors. Four-point probe may be adopted into a novel high temperature resistivity measurement setup in order to measure the resistivity of the sensor accurately.